Nuclear effects in Kerr rotation-detected magnetic resonance of electrons in GaAs

نویسندگان

  • B. Heaton
  • D. N. Jenson
چکیده

Wehave studied nuclear effects on electron spins in lightly doped n-GaAs bulk and quantumwell samples using optically detected magnetic resonance, with the optical detection done via Kerr rotation. The magnetic resonance signal allowed us to measure the electron T ∗ 2 lifetimes and g-factors. We observed strong dynamic nuclear polarization, which was controllable via nuclear magnetic resonance techniques. We measured the nuclear spin relaxation time (T1) by monitoring the changing Overhauser field in time, and were able to perform combined electron and nuclear resonance. © 2009 Elsevier Ltd. All rights reserved.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Gate control of dynamic nuclear polarization in GaAs quantum wells.

Gate control of dynamic nuclear polarization under optical orientation is demonstrated in a Schottky-gated n-GaAs/AlGaAs (110) quantum well by time-resolved Kerr rotation measurements. Spin relaxation of electrons due to mechanisms other than the hyperfine interaction is effectively suppressed as the donor induced background electron density is reduced from metallic to insulating regimes. Subse...

متن کامل

Controlling hole spin dynamics in twodimensional hole systems at low temperatures

With the recent discovery of very long hole spin decoherence times in GaAs/AlGaAs heterostructures of more than 70 ns in two-dimensional hole systems, using the hole spin as a viable alternative to electron spins in spintronic applications seems possible. Furthermore, as the hyperfine interaction with the nuclear spins is likely to be the limiting factor for electron spin lifetimes in zero dime...

متن کامل

Optically oriented and detected electron spin resonance in a lightly doped n-GaAs layer

Spin resonance of localized electrons bound to donors in a specially designed n-GaAs layer has been performed at 236 MHz and 41 mT, using circular polarized light to polarize the electrons and photoluminescence to detect the electronic polarization. The polarization was diminished under the resonance condition. The electronic g factor obtained by this measurement is 20.4160.01. The resonance li...

متن کامل

Dynamic nuclear polarization and nuclear magnetic resonance in the vicinity of edge states of a 2DES in GaAs quantum wells.

Nuclear magnetic resonance is detected via the in-plane conductivity of a two-dimensional electron system at unity Landau level filling factor in the regime of the quantum Hall effect in narrow and wide quantum wells. The NMR is spatially selective to nuclei with a coupling to electrons in the current carrying edge states at the perimeter of the 2DES. Interpretation of the electron-nuclear doub...

متن کامل

Nonequilibrium nuclear polarization and induced hyperfine and dipolar magnetic fields in semiconductor nanostructures

We investigate the dynamic nuclear polarization (DNP) caused by hyperfine coupling between nonequilibrium electronic spins and nuclear spins in semiconductor nanostructures. We derive the time and position dependence of the resulting hyperfine and dipolar magnetic fields. In GaAs quantum wells the induced nuclear spin polarization greatly exceeds the polarization of the electronic system that c...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009